Full Bridge Mosfet Driver

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode.

The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling.

H-Bridge MOSFETs Diodes Incorporated’s’ line of MOSFET H-Bridges optimize the design of DC motor control and inverter circuits. With a simplified design, one Diodes MOSFET H-Bridge can replace two dual SO’s, reducing: PCB area footprint by 50%, component count and PCB area, and overall cost. Full Bridge MOSFET Driver Products. Reset All Filters. Show/Hide Columns. Show New/Popular Products Download. Product Buy Status Documents Automotive Recommended 5K Pricing MOSFET Driver Type Driver Type Configuration Peak Output Current (source/sink, A).

Both controlling and power signals are available on pin strip for easy connection to customer's board. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.